Department of Electronics. University of Valladolid

Atomistic Process Simulation at e-UVA

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Conference presentations about the simulation technique and its capabilities:

· IEEE International Electron Device Meeting (IEDM 2007). Washington DC, USA
Current Capabilities and Future Prospects of Atomistic Process Simulation pdf (1.7 MB)

· Simulation of Semiconductor Processes and Devices 2007 (SISPAD 2007)
Atomistic modeling of defect diffusion in SiGe. pdf (700 KB)

· Presentation in Crolles, France, April 2005.
Predictive Front-End Process Simulation: The kinetic Monte Carlo Approach pdf (2.2MB)

· Spanish Conference on Electron Devices 2003 (CDE03). Calella, Spain.
Simulación Atomística de Procesos en Microelectrónica. pdf (2.2MB)

· 2nd Int. Conf. on Computational Nanoscience and Nanotechnology, 2002 (ICNN2002). San Juan, Puerto Rico.
Introducing Monte Carlo Diffusion Simulation into TCAD tools

· 32th European Solid-State Device Research Conference, 2002 (ESSDERC 2002). Firenze, Italy.
Exploring Methods for Adequate Simulation of Sub-100nm Devices. pdf (724KB)

· Int. Conf. on Simulation of Semiconductor Processes and Devices, 2001 (SISPAD 2001). Athens, Greece.
Atomistic Front-End Process Modeling: A Powerful Tool for Deep-Submicron Device Fabrication. pdf (4.4 MB)

· Mat. Res. Soc. Spring Meeting 2000. San Francisco, CA.
Symposium: Si Front-End Processing – Physics and Technology of Dopant-Defect Interactions II.
Atomistic Process Modeling: An Accurate and Straightforward Approach for Complex Processing Scenarios. pdf (3.2 MB)

· Challenges in Predictive Process Simulation 2000 (ChIPPS 2000). Wandlitz, Germany.
Building a bridge between ab initio calculations and process simulation. pdf (1MB)

· European Mat. Res. Soc. Spring Meeting 1999. Strasbourg, France.
Kinetic Monte Carlo Simulation: an Accurate Bridge Between Ab-Initio Calculations and Standard Process Experimental Data. pdf (3.4 MB)

· Mat. Res. Soc. Spring Meeting 1998. San Francisco, CA.
Symposium: Silicon Front-End Technology - Materials Processing and Modeling.
Atomistic modeling of point and extended defects in crystalline materials. pdf (1.6MB)

Simulation of a 800C anneal after a 40KeV 5e13 cm^-2 Si⁺ implant on a Si-sample with two Boron spikes. Color code: Amorphous-pockets: grey; B^- :red; B-I clusters: orange; I-clusters: light-yellow; {311}’s: yellow; V-clusters: green. mpg (4.3MB)

Time-evolution observed in the movie:

AP annealing occurs during rump-up. V-clusters survive only near the surface while I-clusters and {311}’s experience ripening. Some small I-clusters, having “magic number” survive for a while. The total Interstitial concentration in the sample after V-cluster dissolution is in good agreement with +1 model (~5e13 cm^-2). Boron in the shallowest spike exhibits a noticeable clustering whereas the deepest one suffers a high diffusion (TED) and almost no clustering. When {311}’s disappear TED finishes and only a slow BIC dissolution is observed.

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