Department of Electronics. University of Valladolid

Atomistic Process Simulation at e-UVA

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Papers about the simulation technique and its capabilities:

·         Martin-Bragado I, Zographos N, Jaraiz M
Long and double hop kinetic Monte Carlo: Techniques to speed up atomistic modeling without losing accuracy.
Mater. Sci. Eng. B 154, 202-206 (2008)

·         M. Jaraiz, P. Castrillo, R. Pinacho, and J. E. Rubio
Current Capabilities and Future Prospects of Atomistic Process Simulation
IEEE International Electron Device Meeting (IEDM 2007), 951-954 (2007) pdf (2MB)

·         Features and Enhancements in Sentaurus Version Z-2007.03 (see section on ‘New Kinetic Monte Carlo Features’) pdf (1.9 MB)
TCAD News. Synopsys, March 2007.

·         Colombeau-B; Yeong-SH; Pandey-SM; Benistant-F; Jaraiz-M; Chui-S
Coupling advanced atomistic process and device modeling for optimizing future CMOS devices
2006 International Symposium on VLSI Technology, Systems and Applications. IEEE (2006) p.145-6

·         L. M Vega
Calibración de parámetros e implementación de un sistema de ayuda para un simulador atomístico de procesos tecnológicos
Diploma Project. University of Valladolid (2006) pdf (7.2MB)

·         Process Simulation Using Atomistic, State-of-the-Art, Kinetic Monte Carlo Models pdf (6 MB)
TCAD News. Synopsys, June 2006.

·         Martin-Bragado-I
Simulación atomística de procesos para Microelectrónica
Tesis doctoral. Universidad de Valladolid, 2004 pdf (6.5MB)

·         Jaraiz-M
Atomistic Simulations in Materials Processing.
“Predictive Simulation of Semiconductor Processing”, ed. by  Dabrowsky-J & Weber-ER
Springer-Verlag (Berlin, 2004) p.73-109

·         Strecker-N; Moroz-V; Jaraiz-M.
Introducing Monte Carlo Diffusion Simulation into TCAD tools
Tech. Proc. 2nd Int. Conf. on Computational Nanoscience and Nanotechnology (2002)
pdf (930 KB)

·         Jaraiz-M; Castrillo-P; Pinacho-R; Martín-Bragado-I; Barbolla-J.
Atomistic Front-End Process Modeling: A Powerful Tool for Deep-Submicron Device Fabrication.
SISPAD Conference 2001. pdf (1 MB)

·         Jaraiz-M; Rubio-E; Castrillo-P; Pelaz-L; Bailon-L; Barbolla-J; Gilmer-GH; Rafferty-CS.
Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data.
Mat. Sci. Semic. Proc. 3 (2000) p.59-63. pdf (174 KB)

·         Jaraiz-M; Castrillo-P; Pinacho-R; Pelaz-L; Barbolla-J; Gilmer-GH; Rafferty-CS.
Atomistic Modeling of Complex Silicon Processing Scenarios
Mat. Res. Soc. Symp. Proc. 610 (2001) p.B11.1-7. pdf (324 KB)

·         Law-ME; Gilmer-GH; Jaraiz-M.
Simulation of defects and diffusion phenomena in silicon.
Mat. Res. Soc. Bull. 25 (2000) p.45-50.
pdf (338 KB)

·         Jaraiz-M.
Process Simulation – Atomistic
 
The Encyclopedia on Materials Science and Technology”.
Elsevier Science. Text: 
pdf (49 KB).  Figures: pdf (427 KB)

jun00coversmall

·         Jaraiz-M; Pelaz-L; Rubio-E; Barbolla-J; Gilmer-GH; Eaglesham-DJ; Gossmann-HJ; Poate-JM.
Atomistic modeling of point and extended defects in crystalline materials.
Mat. Res. Soc. Symp. Proc. 532 (1998) p.43-53. pdf (423 KB)

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