publications

Scientific and technical publications using atomistic KMC-PS:

· Singer J, Jaraiz M, Castrillo P, Laviron C, Cagnat N, Wacquant F, Cueto O, Poncet A
The role of implanter parameters on implant damage generation: an atomistic simulation study
17th International Conference on Ion Implantation Technology, IIT2008
AIP Conference Proceedings 1066, 209-212 (2008) pdf (182 KB)

· Lopez P, Pelaz L, Aboy M, Impellizeri G, Mirabella S, Priolo F, Napolitani E
Atomistic modeling of FnVm complexes in pre-amorphized Si.
Mater. Sci. Eng. B 154, 207-210 (2008)

· Aboy M, Pelaz L, Lopez P, Bruno E, Mirabella S, Napolitani E
Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects.
Mater. Sci. Eng. B 154, 247-251 (2008)

· Castrillo P, Pinacho R, Jaraiz M, Rubio JE, Singer J
The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy.
Mater. Sci. Eng. B 154, 260-263 (2008) pdf (482KB)

· Singer J, Wacquant F, Villanueva D, Salvetti F, Laviron C, Cueto O, Rivallin P, Jaraiz M, Poncet A
Atomistic Simulation and Subsequent Optimization of Boron USJ Using Pre-Amorphization and High Ramp Rates Annealing.
MRS Symp. Proc. 1070, 229-234 (2008)

· Martin-Bragado I, Avci I, Zographos N, Jaraiz M, Castrillo P
From point defects to dislocation loops: A comprehensive modeling framework for self-interstitial defects in silicon.
Solid State Electron. 52, 1430-1436 (2008)

· Lopez P, Pelaz L, Duffy R, Meunier-Beillard P, Roozeboom F, van der Tak K, Breimer P, et al.
F+ Implants in Crystalline Si: The Si Interstitial Contribution.
MRS Symp. Proc. 1070, 279-284 (2008)

· Lopez P, Pelaz L, Duffy R, et al.
Si interstitial contribution of F+ implants in crystalline Si.
J. Appl. Phys. 103, 093538 (2008)

· K. R. C. Mok, F. Benistant, M. Jaraiz, J. E. Rubio, P. Castrillo, R. Pinacho, and M. P. Shrinivasan
Comprehensive model of damage accumulation in silicon
Journal of Applied Physics 103, 014911, 1-7 (2008) pdf (779 KB)

2007

· P. Castrillo, R. Pinacho, J. E. Rubio, L. M. Vega and M. Jaraiz
Atomistic modeling of defect diffusion in SiGe
Simulation of Semiconductor Processes and Devices 2007, 9-12 (2007) pdf (174 KB)

· N. Zographos and I. Martin-Bragado
Atomistic modeling of carbon co-implants and rapid thermal anneals in silicon. (Using Sentaurus Process KMC)
15th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2007 (2007) pdf (109KB)

· J. Singer, F. Salvetti, V. Kaeppelin, F. Wacquant, N. Cagnat, M. Jaraiz, P. Castrillo, E. Rubio, and A. Poncet
Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D
37th European Solid-State Device Research Conference (ESSDERC 2007) pdf (207KB)

· I. Martin-Bragado, I. Avci, N. Zographos, P. Castrillo, and M. Jaraíz
From point defects to dislocation loops: a comprehensive TCAD model for self-interstitial defects in silicon
37th European Solid-State Device Research Conference (ESSDERC 2007) pdf (104KB)

· P. López, L. Pelaz, L.A. Marqués and I. Santos
Atomistic analysis of the annealing behavior of amorphous regions in silicon
Journal of Applied Physics 101, 093518, 1-6 (2007)

· M. Aboy, L. Pelaz, J. Montserrat, F.J. Bermudez, J.J. Hamilton
Boron diffusion and activation in SOI and bulk Si: The role of the buried interface
Nuclear Instruments & Methods In Physics Research Section B 257, 152-156 (2007)

· Mok KRC, Colombeau B, Benistant F, Teo RS, Yeong SH, Yang B, Jaraiz M and Chu S
Predictive simulation of advanced nano-CMOS devices based on kMC process simulation
IEEE Trans. Electron Dev. (2007)

2006

· Colombeau B, Mok KRC, Yeong SH, Bénistant F, Indajang B, Tan O, Yang B, Li Y, Jaraiz M, Cowern NEB, Chu S.
Design and Optimization of nanoCMOS devices using predictive atomistic physics based process modeling
IEDM 2006 pdf (602KB)

· Mok KRC, Colombeau B, Jaraiz M, Castrillo P, Rubio JE, Pinacho R, Srinivasan MP, Benistant F, Martin Bragado I, Hamilton JJ
Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Mater. Res. Soc. Symp. 912 (2006) p.99-104 pdf (323KB)

· López P, Pelaz L, Duffy R, Meunier-Beillard P, van der Tak K, Roozeboom F, Maas G
Fluorine Profile Distortion upon Annealing by the Presence of a CVD Grown Boron Box
Ion Implantation Technology 2006. American Institute of Physics (2006) p.29-32

· Martin-Bragado I, Tian S, Johnson M, Castrillo P, Pinacho R, Rubio JE, Jaraiz M.
Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
Nucl. Instrum. Methods B 253 (2006) p.63-7 pdf (300KB)

· Pelaz L, Aboy M, Lopez P, Santos I, Marques LA.
Physical insight into ultra-shallow junction formation through atomistic modeling
Nucl. Instrum. Methods B 253 (2006) p.41-5

· Aboy M, Pelaz L, Lopez P, Marques LA, Duffy R, Venezia VC.
Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
Appl. Phys. Lett. 88 (2006) Art.191917

· Pelaz L, Aboy M, Lopez P, Santos L, Aboy M, Barbolla J.
Atomistic modeling of dopant implantation, diffusion, and activation
J. Vac. Sci. Tech. B 24 (2006) p.2432-6

· Duffy R, Aboy M, Venezia VC, Pelaz L, Severi S, Pawlak BJ, Eyben P, Janssens T, Vandervorst W, Loo J, Roozeboom F.
Boron pocket and channel deactivation in nMOS transistors with SPER junctions
IEEE Trans. Electron Dev. 53 (2006) p.71-7

2005

· Aboy-M; Pelaz-L; Marques-LA; Lopez-P; Barbolla-J; Duffy-R; Venezia-VC; Griffin-PB.
Role of silicon interstitials in boron cluster dissolution
Appl. Phys. Lett. 86 (2005) Art.31908

· Pinacho-R; Jaraiz-M; Castrillo-P; Martin-Bragado-I; Rubio-JE; Barbolla-J.
Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
Appl. Phys. Lett. 86 (2005) Art.252103 pdf (66KB)

· Martin-Bragado-I; Castrillo-P; Jaraiz-M; Pinacho-R; Rubio-JE; Barbolla-J.
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
Phys. Rev. B 72 (2005) Art.35202 pdf (176KB)

· Martin-Bragado-I; Castrillo-P; Jaraiz-M; Pinacho-R; Rubio-JE; Barbolla-J; Moroz-V.
Fermi-level effects in semiconductor processing: a modeling scheme for atomistic kinetic Monte Carlo simulators
J. Appl. Phys. 98 (2005) Art. 53709 pdf (177KB)

· Mok-KRC; Jaraiz-M; Martin-Bragado-I; Rubio-JE; Castrillo-P; Pinacho-R; Barbolla-J; Srinivasan-MP.
Ion-beam amorphization of semiconductors: a physical model based on the amorphous pocket population
J. Appl. Phys. 98 (2005) Art.46104 pdf (715KB)

· Aboy-M; Pelaz-L; Marques-LA; Lopez-P; Barbolla-J; Duffy-R.
Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
J. Appl. Phys. 97 (2005) Art.103520

· Pelaz-L; Marques-LA; Aboy-M; Lopez-P; Barbolla-J.
Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation
Comput. Mater. Sci. 33 (2005) p.92-105

· Pelaz L, Marques LA, Lopez P, Santos L, Aboy M, Barbolla J.
Atomistic modeling of ion beam induced amorphization in silicon
Nucl. Instrum. Methods B 241 (2005) p. 501-5

· Castrillo-P; Martin-Bragado-I; Pinacho-R; Jaraiz-M; Rubio-JE; Mok-KRC; Miguel-Herrero-FJ; Barbolla-J.
Physically based modeling of dislocation loops in ion implantation processing in silicon
Mater. Sci. Eng. B 124–125 (2005) p.404-8 pdf (740KB)

· Rubio-JE; Jaraiz-M; Martin-Bragado-I; Castrillo-P; Pinacho-R; Barbolla-J.
Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations
Mater. Sci. Eng. B 124–125 (2005) p.392-6 pdf (279KB)

· Mok-KRC; Jaraiz-M; Martin-Bragado-I; Rubio-JE; Castrillo-P; Pinacho-R; Srinivasan-MP; Benistant-F.
Bimodal distribution of damage morphology generated by ion implantation
Mater. Sci. Eng. B 124–125 (2005) p.389–91 pdf (163KB)

· Mok-KRC; Jaraiz-M; Martin-Bragado-I; Rubio-JE; Castrillo-P; Pinacho-R; Srinivasan-MP; Benistant-F.
Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
Mater. Sci. Eng. B 124–125 (2005) p.386–8 pdf (130KB)

· Mok-KRC; Jaraiz-M; Martin-Bragado-I; Rubio-JE; Castrillo-P; Pinacho-R; Srinivasan-MP; Benistant-F.
Comprehensive modeling of ion-implant amorphization in silicon
Mater. Sci. Eng. B 124–125 (2005) p.383–5 pdf (106KB)

· Lopez-P; Pelaz-L; Marques-LA; Barbolla-J; Gossmann-H--J-L; Agarwal-A; Kimura-K; Matsushita-T.
Amorphous layer depth dependence on implant parameters during Si self-implantation
Mater. Sci. Eng. B 124–125 (2005) p.379–82

· Aboy-M; Pelaz-L; Barbolla-J; Duffy-R; Venezia-VC.
Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth
Mater. Sci. Eng. B 124–125 (2005) p.205-9

2004

· Martin-Bragado-I; Jaraiz-M; Castrillo-P; Pinacho-R; Rubio-JE; Barbolla-J.
Ion implant simulations: kinetic Monte Carlo annealing assessment of the dominant features
Appl. Phys. Lett. 84 (2004) p.4962-4 pdf (81KB)

· Aboy-M; Pelaz-L; Marques-LA; Barbolla-J.
Atomistic analysis of the ion beam induced defect evolution
Nucl. Instrum. Methods B 216 (2004) p.100-4

· Pelaz-L; Marques-LA; Aboy-M; Barbolla-J.
Atomistic modeling of ion beam induced amorphization in silicon
Nucl. Instrum. Methods B 216 (2004) p.41-5

· Martin-Bragado-I; Jaraiz-M; Castrillo-P; Pinacho-R; Rubio-JE; Barbolla-J.
A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations
Mater. Sci. Eng. B 114-115 (2004) p.345-8 pdf (103KB)

· Martin-Bragado-I; Pinacho-R; Castrillo-P; Jaraiz-M; Rubio-JE; Barbolla-J.
Physical modeling of Fermi-level effects for decanano device process simulations
Mater. Sci. Eng. B 114-115 (2004) p.284-9 pdf (176KB)

· Aboy-M; Pelaz-L; Marques-LA; Lopez-P; Barbolla-J; Venezia-VC; Duffy-R; Griffin-PB.
The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles
Mater. Sci. Eng. B 114-115 (2004) p.193-7

· Rubio-JE; Jaraiz-M; Martin-Bragado-I; Pinacho-R; Castrillo-P; Barbolla-J.
Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation
Mater. Sci. Eng. B 114-115 (2004) p.151-5 pdf (178KB)

· Pinacho-R; Jaraiz-M; Castrillo-P; Rubio-JE; Martin-Bragado-I; Barbolla-J.
Comprehensive, physically based modelling of As in Si
Mater. Sci. Eng. B 114-115 (2004) p.135-40 pdf (156KB)

· Lopez-P; Pelaz-L; Marques-LA; Santos-I; Aboy-M; Barbolla-J.
Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants
Mater. Sci. Eng. B 114-115 (2004) p.82-7

· Jihyun-Seo; Ohseob-Kwon; Kidong-Kim; Taeyoung-Won; Jaraiz-M; Martin-Bragado-I.
Atomistic modeling and simulation of boron diffusion in crystalline materials: KMC
J. Korean Phys. Soc. (2004) p.S779-82

2001-2003

· Aboy-M; Pelaz-L; Marques-LA; Barbolla-J; Mokhberi-A; Takamura-Y; Griffin-PB; Plummer-J-D.
Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
Appl. Phys. Lett. 83 (2003) p.4166-8

· Pelaz-L; Marques-LA; Aboy-M; Barbolla-J; Gilmer-G-H.
Atomistic modeling of amorphization and recrystallization in silicon
Appl. Phys. Lett. 82 (2003) p.2038-40

· Martin-Bragado-I; Jaraiz-M; Castrillo-P; Pinacho-R; Barbolla-J; De-Souza-M-M.
Mobile silicon di-interstitial: surface, self-interstitial clustering, and transient enhanced diffusion phenomena
Phys. Rev. B 68 (2003) p.195204-1-5 pdf (138KB)

· Noda-T
Modeling of indium diffusion and end-of-range defects in silicon using a kinetic Monte Carlo simulation
J. Appl. Phys. 94 (2003) p.6396-6400

· Aboy-M; Pelaz-L; Marques-LA; Enriquez-L; Barbolla-J.
Atomistic analysis of defect evolution and transient enhanced diffusion in silicon
J. Appl. Phys. 94 (2003) p.1013-18

· Pelaz-L; Marques-LA; Aboy-M; Gilmer-G; Bailon-LA; Barbolla-J.
Monte Carlo modeling of amorphization resulting from ion implantation in Si
Comput. Mater. Sci. 27 (2003) p.1-5

· Asenov-A; Jaraiz-M; Roy-S; Roy-G; Adamu-Lema-F; Brown-AR; Moroz-V; Gafiteanu-R.
Integrated Atomistic Process and Device Simulation of Decananometre MOSFETs
SISPAD 2002, Kobe, Japan (2002) pdf (930 KB)

· Pinacho-R; Castrillo-P; Jaraiz-M; Martin-Bragado-I; Barbolla-J; Gossmann-HJ; Gilmer-GH; Benton-JL.
Carbon in silicon: Modeling of diffusion and clustering mechanisms
J. Appl. Phys. 92 (2002) p.1582-7 pdf (98KB)

· Pinacho-R; Jaraiz-M; Gossmann-HJ; Gilmer-GH; Benton-JL; Werner-P.
The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by Kinetic Monte Carlo simulations.
Mat. Res. Soc. Symp. Proc. 610 (2001) p.B7.2.1-6

· Pelaz-L; Marques-LA; Gilmer-GH; Jaraiz-M; Barbolla-J.
Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si .
Nucl. Instr. Meth. B 180 (2001) p.12-16 pdf (134KB)

< 2000

· Cowern-NEB; Mannino-G; Stolk-PA; Roozeboom-F; Huizing-HGA; van-Berkum-JGM; Cristiano-F; Claverie-A; Jaraiz-M.
Energetics of self-interstitial clusters in Si.
Phys. Rev. Lett. 82 (1999) p.4460-3 pdf (157KB)

· Vuong-HH; Gossmann-HJ; Pelaz-L; Celler-GK; Jacobson-DC; Barr-D; Hergenrother-J; Monroe-D; Venezia-VC; Rafferty-CS; Hillenius-SJ; McKinley-J; Stevie-FAA; Granger-C.
Boron pileup and clustering in silicon-on-insulator films.
Appl. Phys. Lett. vol.75 (1999) p.1083-5

· Pelaz-LA; Venezia-VC; Gossmann-H-J; Gilmer-GHA; Fiory-AT; Rafferty-CSA; Jaraiz-M; Barbolla-J.
Activation and deactivation of implanted B in Si.
Appl. Phys. Lett. 75 (1999) p.662-4

· Pelaz-L; Gilmer-GH; Gossmann-H-J; Rafferty-CS; Jaraiz-M; Barbolla-J.
B cluster formation and dissolution in Si: A scenario based on atomistic modeling.
Appl. Phys. Lett. vol.74 (1999) p.3657-9

· Pelaz-L; Gilmer-GH; Venezia-VC; Gossmann-H-J; Jaraiz-M; Barbolla-J.
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion.
Appl. Phys. Lett. 74 (1999) p.2017-19

· Pelaz-L; Gilmer-GH; Jaraiz-M; Herner-SB; Gossmann-H-J; Eaglesham-DJ; Hobler-G; Rafferty-CS; Barbolla-J.
Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model.
Appl. Phys. Lett. 73 (1998) p.1421-3

· Pelaz-L; Jaraiz-M; Gilmer-GH; Gossmann-H-J; Rafferty-CS; Eaglesham-DJ; Poate-JM.
B diffusion and clustering in ion implanted Si: the role of B cluster precursors.
Appl. Phys. Lett. 70 (1997) p.2285-7

· Stolk-PA; Gossmann-H-J; Eaglesham-DJ; Jacobson-DC; Rafferty-CS; Gilmer-GH; Jaraiz-M; Poate-JM; Luftman-HS; Haynes-TE.
Physical mechanisms of transient-enhanced dopant diffusion in ion-implanted silicon.
J. Appl. Phys. 81 (1997) p.6031-50 pdf (870 KB)

· Jaraiz-M; Gilmer-GH; Poate-JM; de-la-Rubia-TD.
Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena.
Appl. Phys. Lett. 68 (1996) p.409-11 pdf (71 KB)

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