Artículos experimentales

InGaAs S.M. Gulwadi, M.V. Rao, A.K. Berry, D.S. Simons, P.H. Chi, and H.B. Dietrich. Transitional metal implants in In0.53Ga0.47As. J. Appl. Phys., 68(8):4222-4227, 1991.
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M.V. Rao, S.M. Gulwadi, P.E. Thompson, A. Fathimulla, and O.A. Aina. Halogen lamp rapid thermal annealing of Si- and Be-implanted In0.53Ga0.47As. J. Electron Mater., 18(2):131-136, 1989.
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InP:Fe R.K. Nadella, M.V. Rao, D.S. Simons, P.H. Chi, M. Fatemi, and H.B. Dietrich. High energy Si implantation into InP:Fe. J. Appl. Phys., 70(3):1750-1757, 1991.
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R.K. Nadella, M.V. Rao, D.S. Simons, and P.H. Chi. 0.4-3.0-MeV range Be-ion implantations into InP:Fe. J. Appl. Phys., 70(6):2973-2978, 1991.
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InSb] M.V. Rao, P.E. Thompson, R. Echard, S. Mulpuri, A.K. Berry, and H.B. Dietrich. Be, S, Si, and Ne ion implantation in InSb grown on GaAs. J. Appl. Phys., 69(8):4228-4233, 1991.
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6H-SiC M.V. Rao, J.A. Gardner, P.H. Chi, O.W. Holland ang G. Kelner, J. Kretchmer, and M. Ghezzo. Phosphorous and boron implantation in 6H-SiC. J. Appl. Phys., 81(10):6635-6641, 1997.
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M.V. Rao, P. Griffiths, J. Gardner, O.W. Holland, M. Ghezzo, J. Kretchmer, G. Kelner, and J.A. Freitas. Al, Al/C and Al/Si implantations in 6H-SiC. J. Electron Mater., 25(1):75-80, 1996.
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M.V. Rao, J. Tucker, O.W. Holland, N. Papanicolau, P.H. Chi, J.W. Kretchmer, and M. Ghezzo. Donor ion implantation doping into SiC. J. Electron Mater., 28(3):334-340, 1999.
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E.V. Handy, M.V. Rao, O.W. Holland, P.H. Chi, K.A. Jones, M.A. Derenge, R.D. Vispute, and T. Venkatesan. Al, b, and ga ion-implantation doping of sic. J. Electron Mater., 29(11):1340-1345, 2000.
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SiC / GaN N. Papanicolau, M.V. Rao, B. Molnar, J. Tucker, A. Edwards, O.W. Holland, and M.C.Ridgway. Ion implantation in sic and gan. Nucl. Instr. and Meth. B, 148:416-420, 1999.
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[11] V.I. Shulga and W. Eckstein. Depth of sputtered atoms for elemental targets. Nucl. Instr. and Meth. B, 145:492-502, 1998.
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[12] V.I. Shulga. Depth-dependent angular distribution of sputtered atoms. Nucl. Instr. and Meth. B, 155:382-394, 1999.
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[13] V.I. Shulga. The density effects in sputtering of amorphous materials. Nucl. Instr. and Meth. B, 170:347-361, 2000.
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[14] A.F. Komarov, F.F. Komarov, P. Zukowski, Cz. Karwat, and A.A. Kamarou. Simulation of two-beam ion implantation in the multilayer and multicomponent targets. Vacuum, 63:495-499, 2001.
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[15] Peter Sigmund and Andreas Schinner. Effective charge and related/unrelated quantities in heavy-ion stopping. Nucl. Instr. and Meth. B, 174:535-540, 2001.
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[16] Mark T. Robinson. Computer simulation of collision cascades in monazite. Phys. Rev. B, 27(9):5347-5359, 1983.
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