Department of Electronics. University of
Valladolid
Atomistic Process Simulation at e-UVA
Other publications on Silicon Processing not
directly related to KMC Simulations:
·
P.
Lopez, L. Pelaz, R. Duffy, P. Meunier-Beillard, F. Roozeboom, K. van der Tak, P. Breimer, J.G.M. van Berkum, M.A.
Verheijen, and M. Kaiser
Evolution of fluorine and boron profiles
during annealing in crystalline Si
Journal of Vacuum Science & Technology B (in press)
·
P.
Lopez, L. Pelaz, R. Duffy, P. Meunier-Beillard, F. Roozeboom, K. van der Tak, P. Breimer, J.G.M. van Berkum, M.A. Verhijen, M. Kaiser
Fluorine effect on defect formation and B
diffusion in crystalline Si
International Workshop on Insight in Semiconductor Device Fabrication,
Metrology and Modeling (INSIGHT 2007)
·
P.D.
Edmonson, R.C. Birtcher, V.M. Vishnyakov,
P. López, L. Pelaz, L.A. Marqués and S.E. Donnelly
An in situ transmission electron
microscope study of the anomalous annealing of spatially isolated disordered
zones in silicon
EMAG-NANO 2005: Imaging, Analysis and Fabrication on The Nanoscale, Journal
of Physics: Conference Series 26, 284-287 (2006)
·
Kalyanaraman,-R.; Venezia,-V.-C.;
Pelaz,-L.; Haynes,-T.-E.; Gossmann,-H.--J.-L.;
Rafferty,-C.-S.
Enhanced low temperature electrical
activation of B in Si
Appl. Phys. Lett. 82 (2003) p.215-17
·
Venezia-VC; Pelaz-L; Gossmann-H-JL; Haynes-TE; Rafferty-CS
Binding energy of vacancy clusters
generated by high-energy ion implantation and annealing of silicon
Appl. Phys. Lett. 79, (2001) p.1273-5
·
Hobler-G; Pelaz-L;
Rafferty-CS.
Dose, energy, and ion species dependence
of the effective plus factor for transient enhanced diffusion.
J. Electrochem. Soc. 147 (2000) p.3494-501
·
Vuong-H-H; Xie-Y-H;
Frei-MR; Hobler-G; Pelaz-L; Rafferty-CS.
Use of transient enhanced diffusion to
tailor boron out-diffusion.
IEEE Trans. Electron Dev. 47 (2000) p.1401-5
·
Venezia-VC; Haynes-TE; Agarwal-A; Pelaz-L; Gossmann-H-J;
Jacobson-DC; Eaglesham-DJ.
Mechanism for the reduction of interstitial supersaturations in
MeV-implanted silicon.
Appl. Phys. Lett.
74 (1999) p.1299-301
·
Herner-SB; Gossmann-H-J; Pelaz-LP; Gilmer-GH; Jaraiz-M;
Jacobson-DC; Eaglesham-DJ.
Ion mass influence on transient enhanced
diffusion and boron clustering in silicon: Deviation from the "+1"
model.
J. Appl. Phys. 83 (1998) p.6182-4
·
Agarwal-A;
Gossmann-H-J; Eaglesham-DJ;
Pelaz-L; Jacobson-DC; Poate-JM;
Haynes-TE.
Critical issues in ion implantation of
silicon below 5 keV: defects and diffusion.
Mat. Sci. Engineering A 253(1998) p.269-74
·
Agarwal-A;
Gossmann-H-J; Eaglesham-DJ;
Pelaz-L; Herner-SB;
Jacobson-DC; Haynes-TE; Simonton-R.
Damage, defects and diffusion from
ultra-low energy (0-5 keV) ion implantation of
silicon.
Mat. Sci. Semicond. Processing (1998) p.17-25
·
Agarwal-A;
Gossmann-H-J; Eaglesham-DJ;
Pelaz-L; Jacobson-DC; Haynes-TE; Erokhin-YuE.
Reduction of transient diffusion from 1-5
keV Si/sup +/ ion implantation due to surface
annihilation of interstitials.
Appl. Phys. Lett. 71 (1997) p.3141-3
·
Rafferty-CS;
Gilmer-GH; Jaraiz-M; Eaglesham-D;
Gossmann-H-J.
Simulation of cluster evaporation and
transient enhanced diffusion in silicon.
Appl. Phys. Lett. 68 (1996) p.2395-7